Which mechanism dictates the oxidation rate of silicon during integrated circuit manufacturing at high temperatures?

💡 Explanation

At high temperatures, silicon oxidation's rate becomes diffusion-limited because silicon dioxide formation slows the diffusion of the oxidizing species (e.g., O2) through the growing oxide layer. Therefore, diffusion-limited kinetics dominate oxidation, rather than surface energy, electron tunneling, or viscosity which are less influential at these temperatures and oxidation conditions.

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