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Which mechanism explains increased electron mobility when a silicon crystal lattice has reduced defects?

A)Enhanced Band Structure Formation
B)Decreased Phonon Scattering
C)Increased Electron-Hole Recombination
D)Improved Density of States Alignment

💡 Explanation

Reduced crystal defects lower phonon concentration, because the dominant scattering mechanism limiting electron mean free path is phonon scattering. Therefore, mobility improves due to fewer obstructions, rather than band structure adjustments predominating or boosted recombination.

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