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Which mechanism fundamentally limits the transistor gate dielectric thickness?

A)Quantum tunneling dominates leakage current
B)Capacitive coupling weakens inversion layer
C)Increased ion implantation causes breakdown
D)Thermal expansion strains the materials

💡 Explanation

Quantum tunneling allows electrons to pass through the gate dielectric even when classically forbidden, because the thin barrier width enables a non-zero probability of transmission, resulting in leakage; therefore tunneling limits miniaturization, rather than capacitive weakening, breakdown, or thermal expansion effects.

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