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Which mechanism increases current leakage when integrated circuit dimensions shrink?

A)Decreasing gate oxide thickness
B)Increased channel doping levels
C)Quantum tunneling through gate
D)Reduced supply voltage threshold​

💡 Explanation

Quantum tunneling through gate insulators increases leakage because electron wave functions penetrate the forbidden energy band with decreased thickness, therefore carriers move through the insulator rather than remaining contained with perfect insulation in thicker gates.

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