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Which mechanism leads to carrier avalanche in reverse-biased semiconductor junctions?

A)Impact ionization releases more carriers
B)Quantum tunneling bypasses barrier width
C)Thermal generation becomes self-sustaining
D)Recombination rate stabilizes carrier density

💡 Explanation

Increasing electric field accelerates carriers, and impact ionization increases exponentially when they attain sufficient kinetic energy hitting other atoms; this positive feedback causes avalanche rather than recombination, because the new free carriers continue cascade accelerating, therefore drastically increasing current flow.

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