Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich mechanism limits drain current as MOSFET gate oxide thickness decreases?
A)Quantum tunneling leakage increases exponentially✓
B)Thermal runaway destroys the gate
C)Channel length modulation induces breakdown
D)Contact resistance limits achievable conductance
💡 Explanation
As gate oxide thins, electrons tunnel through the insulating layer due to quantum tunneling, because the barrier width reduces; therefore leakage dramatically escalates, rather than thermal or channel effects dominating at these extremes.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- During the production of polyethylene films which consequence results when branching increases?
- Which outcome occurs when moisture-laden air ascends a mountain slope?
- Which risk increases when cross-linked polymer films degrade under UV radiation?
- Which outcome occurs when multiple quantum dots are closely spaced?
- Which outcome results when a radio antenna exceeds its capacitance limit?
- What mechanism causes increased reactivity when an alkene coordinates to a platinum catalyst?
