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← ScienceWhich mechanism limits DRAM cell miniaturization because of increased leakage?
A)Quantum Electron Tunneling✓
B)Increased Oxide Breakdown
C)Electromagnetic Interference Coupling
D)Dopant Atom Migration
💡 Explanation
As oxide layers in DRAM cells thin, stored charge leaks due to Quantum Electron Tunneling. This happens because electrons pass through the insulating layer with finite probability. Therefore, data retention time decreases, rather than oxide breakdown induced failures.
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