Which mechanism limits electron mobility in complementary metal-oxide-semiconductor transistor circuits with high doping concentrations?

💡 Explanation

With high doping, increased ionized impurity scattering occurs because abundant dopant ions interact with electron pathways, deflecting them efficiently according to the coulombic force, reducing momentum transfer and mobility. Therefore impurity scattering is greatest, rather than phonon scattering, impact ionization or tunneling, which are caused by either lattice vibration, strong acceleration, or thin barriers.

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