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Which mechanism limits electron mobility when doping semiconductors at very high concentrations?

A)Increased electron-phonon scattering
B)Enhanced Auger recombination rate
C)Impurity ion scattering dominance
D)Reduced bandgap from carrier injection

💡 Explanation

When doping semiconductors heavily, increased ionized impurity concentration causes electron deflection via Coulombic interactions known as impurity ion scattering, limiting the electron's mean free path and mobility. Therefore, impurity ion scattering dominates, rather than phonon scattering, Auger recombination, or bandgap narrowing, which have other dependencies.

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