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Which mechanism limits laser etching resolution on silicon wafers?

A)Diffraction causes interference patterns beyond focus
B)Plasma formation induces Coulomb repulsion
C)Thermal gradients cause material deformation
D)Nonlinear absorption saturates etching rate

💡 Explanation

The spot size of a focused laser beam is limited by diffraction; Fraunhofer diffraction creates divergence. Therefore, the etching resolution suffers because the beam spreads beyond the intended focal point, rather than just being limited by thermal or saturation effects.

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