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Which mechanism limits maximum drain current through nanoscale MOSFET at high gate voltages?

A)Velocity saturation from optical phonon scattering
B)Gate oxide breakdown from Fowler-Nordheim tunneling
C)Channel length modulation from drain voltage
D)Contact resistance from Schottky barrier formation

💡 Explanation

At high gate voltages, electron velocity in nanoscale MOSFETs reaches a limit determined by velocity saturation, where electrons scatter with optical phonons thus limiting further current increase. Therefore velocity saturation occurs, rather than breakdown, modulation, or resistance which require different limiting factors.

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