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Which mechanism limits temperature attainable in molecular beam epitaxy?

A)Surface adatom desorption increases strongly
B)Chamber outgassing overwhelms deposition
C)Substrate thermal conductivity declines steeply
D)Beam source material vapor pressure peaks

💡 Explanation

Surface temperature rises until adatoms gain enough kinetic energy for desorption, regulated by the Arrhenius equation; therefore, further increases do not favor film growth, rather than continued epitaxial deposition, because adatoms prevent complete film formation.

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