Which mechanism limits the minimum feature size achievable in extreme ultraviolent lithography due to electron orbitals?

💡 Explanation

When EUV photons strike the resist, they cause photoemission of electrons during photoionization because the photon's energy excites core electrons to unoccupied molecular orbitals enabling ionization, leading to scattering that blurs the image. Therefore photoelectron scattering limits feature size, rather than tunneling, resonance, or saturation which have different causes.

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