Which mechanism limits the minimum size of a silicon-based MOSFET transistor?

💡 Explanation

When gate oxide thickness decreases, quantum tunneling occurs because electrons can pass through the insulating layer due to wave-like behavior, leading to increased leakage current and unreliable switching. Therefore, tunneling limits further miniaturization, rather than thermal runaway, electromigration, or capacitance which involve different failure mechanisms and limitations.

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