Which mechanism limits the minimum size of transistor gate oxide when quantum tunneling is significant?

💡 Explanation

When gate oxide thickness decreases, quantum tunneling allows electrons to pass through the insulating layer even when the transistor is off, because electron orbitals become close enough. This tunneling leads to increased off-state current. Therefore, electron leakage limits thickness, rather than capacitance, scattering, or diffusion which are influenced by other factors.

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