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← ScienceWhich mechanism limits transistor scaling when gate oxide thickness approaches a single atomic layer of silicon dioxide?
A)Quantum tunneling through the insulator✓
B)Increased electron-phonon scattering rates
C)Enhanced surface defect densities
D)Reduced channel carrier mobility
💡 Explanation
As gate oxide thickness decreases to atomic scales, quantum tunneling occurs because the electron wave function has a non-zero probability of penetrating the thin insulating barrier, creating leakage current. Therefore unwanted current leakage results, rather than scattering, defects or reduced mobility which involve material properties, not quantum effects.
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