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Which mechanism produces current above gate-oxide breakdown voltages?

A)Fowler-Nordheim quantum tunneling
B)CMOS channel carrier drift
C)Thermal electron-hole generation
D)Reverse bias avalanche breakdown

💡 Explanation

Fowler-Nordheim quantum tunneling causes current because electrons tunnel through the gate oxide under high electric fields. This high current can cause gate-oxide breakdown, therefore field emission across the thin oxide occurs rather than simpler reverse breakdown.

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