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Which mechanism widens the band gap within strained silicon?

A)Quantum confinement under biaxial stress
B)Increased phonon-electron scattering rate
C)Impurity incorporation decreasing free carriers
D)Enhanced Auger recombination above threshold

💡 Explanation

The deformation potential alters electronic state energies under mechanical stress, causing band structure modulation; this is Quantum confinement. The gap widens because biaxial tension shifts specific band edges, therefore leading to a larger energy difference rather than increased scattering or recombination.

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