Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich outcome can occur when exceeding the drain-source voltage limits within a Gallium Nitride (GaN) HEMT?
A)Avalanche breakdown lowers transistor gain✓
B)Channel length modulation decreases resistance
C)Schottky barrier enhancement reduces current
D)Thermionic emission increases saturation current
💡 Explanation
Avalanche breakdown occurs because impact ionization creates electron-hole pairs within the GaN's band gap at high electric fields impacting the channel. Therefore, the transistor's gain plummets due to uncontrolled current rather than length modulation or barrier changes under lower stress.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which phenomenon is enhanced near a black hole?
- Which outcome occurs when an ice slurry used for rapid food cooling experiences decreased agitation?
- Which risk correlates to exceeding the Uranium-235 half-life?
- Which outcome occurs when amorphous silicon in solar panel is heated above glass transition temperature?
- Which outcome occurs when a chiller unit loses refrigerant?
- Which risk increases when a silicon ingot cools rapidly during Czochralski crystal growth?