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Which outcome during plasma etching arises when ion angular distribution broadens?

A)Increased micro-trenching at feature sidewalls
B)Enhanced oxide selectivity over silicon
C)Decreased etch rate uniformity cross-wafer
D)Improved critical dimension etch bias

💡 Explanation

Micro-trenching increases because ion angular distribution affects the angle at which ions strike the surface, causing non-uniform material removal. The mechanism is momentum transfer from ions to substrate atoms; therefore it leads to micro-trenching rather than other effects because these are caused by isotropic etching.

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