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Which outcome follows when a strained silicon transistor’s gate oxide thins?

A)Increased quantum tunneling probability
B)Reduced channel carrier velocity
C)Decreased source-drain leakage current
D)Higher threshold voltage stability

💡 Explanation

Increased quantum tunneling weakens the barrier, thus increasing current flow because electrons can pass through the gate oxide via quantum tunneling; therefore, leakage increases, rather than decreases, due to the thinner oxide layer.

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