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Which outcome impairs MOSFET transistors at cryogenic temperature?

A)Band gap increases, threshold shifts
B)Dopant freeze-out becomes insignificant
C)Channel mobility degradation decreases
D)Minority carrier injection diminishes

💡 Explanation

Increased band gap elevates carrier activation energy; therefore threshold voltage increases, decreasing transistor drive current, rather than dopant freeze-out which lowers conductivity at low temperatures because it reduces free carriers.

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