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Which outcome impairs transistor operation when thermal energy increases?

A)Reduced semiconductor band gap energy
B)Increased electron-phonon scattering rate
C)Enhanced quantum tunneling probability
D)Elevated dielectric breakdown strength

💡 Explanation

A shrinking band gap increases intrinsic carrier concentration, because exceeding doping concentration triggers thermal runaway. This is rather than increased tunneling or scattering, therefore thermal runaway directly results because of narrowed semiconductor band gap energy.

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