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Which outcome inhibits transistor function during rapid temperature cycling?

A)Thermally excited electron hole generation
B)Debye length screening decreases sharply
C)Phonon scattering decreases overall carrier mobility
D)Built-in potential increases band bending

💡 Explanation

Thermally excited electron hole generation increases sharply because thermal energy allows more electrons to jump the material's band gap, resulting in a greater concentration of electron-hole pairs that disrupt transistor blocking; therefore leakage increases, rather than the other effects under changing thermal conditions.

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