Which outcome is most likely when an electron tunnels through an ultra-thin insulating layer in a nanoscale transistor?

💡 Explanation

When an electron tunnels through an insulating layer, quantum tunneling allows electrons to pass through a barrier despite lacking the energy to overcome it classically, leading to a leakage current. Therefore, increased gate leakage current is most likely, rather than mobility reduction, speed increase, or less dissipation, which require different operational characteristics.

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