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Which outcome is most likely when the gate oxide in a MOSFET becomes excessively thin?

A)Increased subthreshold leakage current
B)Reduced channel mobility saturation
C)Enhanced drain-induced barrier lowering
D)Higher gate capacitance linearity

💡 Explanation

When the gate oxide becomes excessively thin, quantum tunneling of electrons increases because the potential barrier width is reduced, leading to increased subthreshold leakage current. Therefore increased leakage results, rather than reduced mobility, enhanced DIBL, or linearity which relate to different channel physics.

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