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← ScienceWhich outcome is unavoidable when manufacturing solid-state drives due to quantum mechanics?
A)Electron tunneling corrupts adjacent cells✓
B)Increased gate dielectric thermal breakdown
C)Write endurance degrades linearly over time
D)Data retention reduces because of resistance
💡 Explanation
Electron tunneling inevitably corrupts adjacent memory cells in solid-state drives because electrons have a probability to tunnel through insulators. Therefore, data errors increase, rather than other electrical degradation mechanisms affecting drive life under normal conditions.
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