Which outcome limits gate oxide scaling in advanced MOSFET transistors when considering electron tunneling?

💡 Explanation

When gate oxide thickness decreases, direct tunneling probability increases because quantum mechanical effects allow electrons to pass through the potential barrier, increasing gate leakage. Therefore increased gate leakage results, rather than mobility reduction, instability, or injection which are caused by distinct mechanisms and conditions.

• Which operational problem arises when multiple lasers, intended for optical interferometry, lack temporal coherence?
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