Which outcome occurs due to electron scarcity in deep submicron transistors?

💡 Explanation

Increased gate oxide leakage occurs because decreased channel length accentuates **quantum tunneling** through the thin gate oxide. Thus electrons tunnel through the gate oxide barrier rather than following lower resistance paths, therefore creating leakage, not reduced barrier lowering.

• Which outcome reduces catalytic efficiency when a fuel cell's electrodes experience hydrogen exposure?
• Which consequence results when antibonding orbitals dominate bonding in diatomic sulfur?
• Which mechanism governs the increasing electrical resistance observed when a silicon wafer is increasingly doped with boron?
• Which mechanism limits electron tunneling through ultra-thin gate oxides in modern MOSFETs, increasing leakage current?
• Which consequence results when exceeding austenite finish temperature?
• Which outcome determines the drag coefficient regime when a sphere moves through a Newtonian fluid?