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Which outcome occurs for copper interconnects on a microchip due to increased electron density at atomic defects?

A)Electromigration induced material accumulation failure
B)Increased thermal conductivity overall scaling
C)Reduction in quantum tunneling electrons
D)Improved stress voiding resistance stability

💡 Explanation

Electromigration induced material accumulation occurs because momentum transfer from electrons to metal ions via momentum exchange facilitates atomic diffusion. Therefore, material accumulates downstream at grain boundaries, leading to failure, rather than improving the chip, because of structural degradation.

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