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Which outcome occurs in a MOSFET-based high-frequency amplifier circuit when exceeding the gate's maximum voltage due to electrostatic discharge?

A)Gate oxide breakdown compromising device isolation
B)Increased channel conductivity boosts amplification
C)Source-drain current decreases, cutting off signal
D)Threshold voltage stabilizes from charge injection

💡 Explanation

Gate oxide breakdown occurs because excessive voltage exceeds the dielectric strength forming a conductive path; therefore device isolation is ruined, rather than improved amplification, since the breakdown creates a permanent short.

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