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Which outcome occurs when a crystalline silicon photodiode experiences prolonged reverse bias at elevated junction temperature?

A)Increased quantum tunneling probability
B)Decreased reverse saturation current
C)Enhanced radiative recombination rates
D)Increased crystal lattice defect density

💡 Explanation

Increased crystal lattice defect density results from the migration of silicon atoms within the crystal due to thermally activated diffusion causing Frenkel defects. Therefore, performance degrades due to increased recombination centers, rather than enhanced carrier mobility under electric fields at low temperatures.

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