Which outcome occurs when a heavily doped silicon crystal rapidly cools?

💡 Explanation

Increased point defect concentrations form because rapid cooling induces thermal stress surpassing diffusion thresholds; therefore, existing vacancies freeze rather than annealing given lattice contractions occur faster than atoms can move, leading to point defects rather than uniform restructuring.

• Which phenomenon inhibits flow when critical number surpassed?
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• Which conduction effect occurs when the applied bias overcomes threshold?