Which outcome occurs when a silicon crystal grows too rapidly during Czochralski pulling?

💡 Explanation

Rapid cooling causes polycrystalline domain formations because the solid-liquid interface becomes unstable, leading to non-uniform crystallization, thus disrupting the single-crystal structure; therefore, polycrystalline formation increases, rather than altering dopant segregation, melting point, or defect diffusion alone.

• Which outcome results when laminar flow transitions to turbulence?
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