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Which outcome occurs when amorphous silicon absorbs sufficient energy during rapid thermal annealing?

A)Grain boundary formation increases
B)Crystallite size increases monotonically
C)Optical absorption edge broadens
D)Stress-induced voiding accelerates

💡 Explanation

When amorphous silicon absorbs sufficient energy during annealing, solid-phase crystallization occurs because atoms gain mobility to find lower-energy crystalline states, leading to crystallite growth. Therefore, crystallite size increases resulting, rather than increased grain boundaries, broadened absorption, or accelerated voiding, which involve other processes or conditions.

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