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← ScienceWhich outcome occurs when attempting to read data in a flash memory cell exhibiting a thin oxide layer?
A)Unintended cell bit flips occur✓
B)Reduced cell threshold voltage occurs
C)Increased data retention lifespan
D)Faster programming speed is achieved
💡 Explanation
Unintended bit flips happen because quantum tunneling becomes significant through the thin oxide, injecting electrons despite the energy barrier; therefore, data corruption, rather than faster programming or improved retention occurs due to this charge leakage.
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