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← TechnologyWhich outcome occurs when exceeding IGBT reverse bias safely area?
A)Destructive avalanche current occurs inside✓
B)Gate-source overvoltage leads to latchup
C)Thermal runaway via leakage current
D)Increased switching losses from increased tailing
💡 Explanation
Destructive avalanche breakdown occurs because excessive reverse voltage forces the collector-base junction into breakdown; therefore, high current causes localized heating leading to device destruction rather than stable voltage limiting or other forms of failure.
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