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Which outcome occurs when high resistance develops in a nanoscale transistor?

A)Increased electron quantum tunneling probability
B)Decreased transistor switching speed
C)Significant reduction in thermal runaway
D)Higher overall gate capacitance value

💡 Explanation

Increased resistance hinders transistor operation because it increases the RC time constant, thus *slowing* the device's switching speed; this is *drift* rather than the desirable behavior due to electron *tunneling*. Therefore, A is wrong because increased resistance correlates with *decreased* transistor performance, rather than increased tunneling.

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