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Which outcome occurs when ionic contamination creates a channel at transistor's planar junction?

A)Source-drain leakage current increases
B)Gate capacitance remains independent
C)Threshold voltage becomes stable
D)Substrate resistance decreases linearly

💡 Explanation

Increased leakage current results from channel formation because ionic contamination establishes a parasitic transistor. The mechanism is surface charge accumulation; therefore current flows even when the transistor is off, rather than proper switching, which would maintain a low off-state current.

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