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Which outcome occurs when parasitic capacitance fluctuates excessively in CMOS?

A)Gate oxide dielectric breakdown worsens
B)Dynamic power dissipation increases
C)Substrate doping concentration decreases
D)Channel length modulation disappears

💡 Explanation

Increases in parasitic capacitance cause increased dynamic power dissipation because the charging and discharging of these capacitances during switching increases the energy consumed via capacitive reactance. Therefore, dissipation rises rather than threshold shifts, because voltage remains constant.

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