Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich outcome occurs when rapid oxide growth on a silicon carbide MOSFET gate?
A)Increased electron tunneling current occurs✓
B)Channel mobility is drastically decreased
C)Threshold voltage remains permanently stable
D)Minority carriers populate depletion zones
💡 Explanation
Increased electron tunneling current occurs because increased oxide thickness causes higher electric fields during operation. The Fowler-Nordheim tunneling mechanism allows electron flow, therefore higher current rather than decreased mobility, because threshold voltage shifts at high temperature.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which consequence results when contamination inhibits plasma density during controlled fusion?
- Which equilibrium shift occurs when solid catalyst surface area decreases during fixed-bed reactor operation?
- Which deformation results from exceeding shear stress in amorphous solids?
- Which consequence results when exceeding a pump's design flow-rate?
- Which outcome occurs when Zeolite catalyst active sites are exposed to high sulfur concentrations during hydrocarbon cracking?
- Which outcome arises when a pulsed microwave source exceeds a waveguide's mode volume?
