Which outcome occurs when source-drain voltage increases in a nanometer-scale MOSFET?

💡 Explanation

When source-drain voltage increases in nanoscale MOSFETs, the electric field across the channel increases significantly, enhancing electron tunneling through the potential barrier because of the reduced effective barrier width. Therefore, electron tunneling probability increases, rather than channel length modulation decreasing, subthreshold slope steepening, or saturation voltage decreasing, which are influenced by different physical mechanisms and bias conditions.

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