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Which outcome occurs when unbound arsenic atoms diffuse into a silicon lattice used in semiconductor fabrication?

A)Increased free electron concentration
B)Formation of silicon carbide inclusions
C)Creation of lattice vacancies reducing mobility
D)Decreased energy band gap, causing breakdown

💡 Explanation

When arsenic diffuses into silicon, it acts as a donor dopant, because arsenic has five valence electrons compared to silicon's four causing arsenic to donate an extra electron into the conduction band contributing to conductivity. Therefore increased free electron concentration results, rather than other changes which require different diffusion processes and atom valencies.

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