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← ScienceWhich outcome occurs within an aluminum gallium arsenide (AlGaAs) semiconductor when subjected to increased gallium content during epitaxy?
A)Band gap energy increases linearly✓
B)Electron mobility remains unchanged
C)Thermal conductivity decreases slightly
D)Refractive index becomes temperature-independent
💡 Explanation
Increasing gallium content enhances the band gap energy of AlGaAs, because gallium incorporation increases electron affinity and reduces the interatomic spacing; therefore, a larger energy photon will be required for transition, rather than thermal conductivity change under constant current conditions.
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