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Which outcome occurs within an aluminum gallium arsenide (AlGaAs) semiconductor when subjected to increased gallium content during epitaxy?

A)Band gap energy increases linearly
B)Electron mobility remains unchanged
C)Thermal conductivity decreases slightly
D)Refractive index becomes temperature-independent

💡 Explanation

Increasing gallium content enhances the band gap energy of AlGaAs, because gallium incorporation increases electron affinity and reduces the interatomic spacing; therefore, a larger energy photon will be required for transition, rather than thermal conductivity change under constant current conditions.

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