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Which outcome predominantly occurs when transistor channel length decreases in very-large-scale integration (VLSI) MOSFETs?

A)Source-drain punchthrough intensification
B)Substrate bias effect stabilization
C)Gate oxide breakdown voltage elevation
D)Threshold voltage temperature insensitivity

💡 Explanation

Source-drain punchthrough intensifies because drain and source depletion regions merge, thus channel length modulation amplifies the drain current, rather than stabilizing substrate bias effect, elevating breakdown voltage, or reducing temperature sensitivity.

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