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Which outcome results from exceeding the avalanche breakdown thermal limit in a semiconductor junction?

A)Uncontrolled current flow
B)Increased gate oxide stress
C)Reduced switching capacitance
D)Enhanced carrier mobility

💡 Explanation

Uncontrolled current flow will result; this is due to impact ionization in the depletion region. The avalanche breakdown mechanism causes a rapid increase in current because free carriers gain sufficient energy to create more electron-hole pairs, therefore the runaway effect occurs, rather than predictable changes like capacitance.

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