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← ScienceWhich outcome results when a gallium arsenide (GaAs) tunnel diode experiences excessive, localized doping?
A)Reduced barrier width breakdown voltage
B)Increased electron-phonon scattering rate
C)Shifted Fermi level into bands✓
D)Enhanced electron-hole recombination lifetime
💡 Explanation
The Fermi level enters the conduction or valence band because increased doping introduces excessive charge carriers at the junction, forcing alteration of band bending (band structure); therefore the Fermi level shift occurs, rather than any changing any scattering or recombination.
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