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Which outcome results when a MOSFET operating in saturation experiences significant drain-source voltage increase?

A)Channel length modulation increases
B)Subthreshold swing decreases
C)Threshold voltage sharply increases
D)Gate oxide thickness increases

💡 Explanation

An increased drain-source voltage causes channel length modulation, because this effect shortens the effective channel length, therefore increasing drain current, rather than modifying fundamental device properties like subthreshold swing.

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