Which outcome results when applying voltage and temperature constraints to silicon-based flash memory cells relying on floating gate transistors?

💡 Explanation

Data corruption increases because Fowler-Nordheim tunneling allows electrons to escape the floating gate over many read cycles when voltage is applied across it repeatedly; therefore, data is lost, rather than endurance improving under these constraints because stress accumulates over time.

• Which consequence results when extreme over-biasing an InGaAs tunnel diode?
• Which consequence results when localized magnetic fields exceed quenching limits in a clinical MRI?
• Which consequence occurs when dissolved hydrogen exceeds the solubility limit in high-strength steel?
• Which distortion occurs because accelerometers cannot differentiate gravity?
• Which outcome arises as a closed Brayton cycle air compressor approaches its cooling limit during continuous operation?
• Which phenomenon results in scanning tunneling microscopy when electrons encounter a vacuum gap?