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Which outcome results when dopants shift the Fermi level near GaN crystal conduction bands?

A)Increased n-type semiconductor conductivity
B)Frustrated magnetisation within the crystal
C)Increased intrinsic electron-hole recombination
D)Reduced phonon scattering at high temperatures

💡 Explanation

Increased n-type semiconductor conductivity occurs when a dopant shifts the Fermi level, due to increased free electron concentration via band bending, therefore, electrical conductivity rises rather than suppressed conductivity or magnetic ordering because doping primarily affects the electronic band structure.

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